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MIP3E50MY

Intelligent Power Device

Description

MIP3E50MY MOS (IPD) ■ (MIP2ExD ■ ■ 50% ) VD 700 VC 8 ID 1.98 IDP 3.1 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ Control ■ TO-220-A2 1: Control 2: Source 3: Drain ■ : MIP3E50MY Drain Max. duty clock SQ RQ SQ RQ MOSFET : 2010 3 SLB00058BJD Source 1 MIP3E50MY ■ TC = 25°C ± 3°C PWM / ) *: fOSC VC = VC(CNT) − 0.2 V, VD = 5 V MA...

Panasonic

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MIP3E50MY Intelligent Power Device - Panasonic

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