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IXTA3N100D2

IXYS

MOSFET

Depletion Mode MOSFET IXTA3N100D2 IXTP3N100D2 N-Channel D G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weigh...


IXYS

IXTA3N100D2

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Depletion Mode MOSFET IXTA3N100D2 IXTP3N100D2 N-Channel D G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 1000 V 20 V 30 V 125 W - 55 ... +150 150 - 55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) ID(on) VGS = 0V, ID = 1.5A, Note 1 VGS = 0V, VDS = 50V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1000 V - 2.5 - 4.5 V 100 nA 5 A 50 A 6 3A VDSX ID(on) = > RDS(on) 1000V 3A 6 TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) GD S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features Normally ON Mode  International Standard Packages Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Easy to Mount Space Savings High Power Density Applications Audio Amplifiers Start-Up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads © 2017 IXYS CORPORATION, All Rights Reserved DS100184E(4/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss VDS = 30V, ID = 1.5A, Note 1 VGS = -10V, VDS = 25V, f =...




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