HY27US08122B

HY27US(08/16)12(1/2)B Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512Mb NAND FLASH HY27US(08/16)12(1/2)B HY27US0812(1/2)B HY27US1612(1/2)B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.5 / Jul. 2007 1 HY27US(08/16)12(1/2)B Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 0.2 0.3 0.4 0.5 History Initial Draft. 1) Correct Figure 14 & 15 1) Add AC Characteristics - tRB : Last RE High to busy (at sequential read) - tCRY : CE High to Ready (in case of interception by CE at read) - tCEH : CE High Hold Time (at the last serial read) 1) Add sequential row read feature and figure 2) Modify Block Replacement 1) Add x16 Characteristics 2) Modify read2 operation (sequential row read) 3) Add AC Characteristics - tOH : RE or CE High to O...