STGB40H65FB

STGB40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram C(2, TAB) G(1) E(3) Features  Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current  Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A  Tight parameter distribution  Safe paralleling  Low thermal resistance Applications  Photovoltaic inverters  High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Order code STGB40H65FB G1C2TE3 Table 1: Device summ...