N-CHANNEL POWER MOSFET
STB24N60DM2, STP24N60DM2, STW24N60DM2
N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg
2
Power MOSFETs in D PA...
Description
STB24N60DM2, STP24N60DM2, STW24N60DM2
N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg
2
Power MOSFETs in D PAK, TO-220 and TO-247 packages
Datasheet − production data
TAB
2 3
1
D2PAK
TAB
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
D(2, TAB)
Features
Order codes
STB24N60DM2 STP24N60DM2 STW24N60DM2
VDS @ TJmax
650 V
RDS(on) max
ID
0.20 Ω 18 A
Extremely low gate charge and input capacitance
Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Extremely high dv/dt and avalanche
capabilities
Applications
G(1) Switching applications
Description
These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are
produced using a new generation of MDmesh™
S(3)
AM01476v1
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest ...
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