STP40N10 STP40N10FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE
STP40N10 STP40N10FI
VDSS
100 V 100 V
R DS(...
STP40N10 STP40N10FI
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTOR
TYPE
STP40N10 STP40N10FI
VDSS
100 V 100 V
R DS( on)
< 0.04 Ω < 0.04 Ω
ID
40 A 22 A
s TYPICAL RDS(on) = 0.035 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s
REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3 2 1
TO-220
3 2 1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S VDG R
Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ)
VGS ID ID ID M() Ptot
Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC
Drain Current (pulsed) Total Dissipation at Tc = 25 oC
Der...