STP40N10FI

STP40N10 STP40N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP40N10 STP40N10FI VDSS 100 V 100 V R DS( on) < 0.04 Ω < 0.04 Ω ID 40 A 22 A s TYPICAL RDS(on) = 0.035 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE s APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 3 2 1 TO-220 3 2 1 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol P ar amete r VD S VDG R Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) VGS ID ID ID M() Ptot Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Der...