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IPP114N12N3G Dataheets PDF



Part Number IPP114N12N3G
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPP114N12N3G DatasheetIPP114N12N3G Datasheet (PDF)

OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP114N12N3 G IPP114N12N3 G 120 V 11.4 mΩ 75 A Package Marking PG-TO220-3 114N12N Maximum ratings,.

  IPP114N12N3G   IPP114N12N3G



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OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP114N12N3 G IPP114N12N3 G 120 V 11.4 mΩ 75 A Package Marking PG-TO220-3 114N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) ID I D,pulse T C=25 °C T C=100 °C T C=25 °C Avalanche energy, single pulse E AS I D=75 A, R GS=25 Ω Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V Value 75 53 300.


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