Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested ...
Type
OptiMOSTM Power-
Transistor
Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21
IPP020N06N
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
60 V 2.0 mW 120 A
119 nC 106 nC
PG-TO220-3
Type IPP020N06N
Package PG-TO220-3
Marking 020N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
120 A 120
V GS=10 V, T C=25 °C, R thJA =50K/W
29
Pulsed drain current2)
I D,pulse T C=25 °C
480
Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W
420 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22 2) See figure 3 for more detailed information
3) See figure 13 for more detailed information 4) Device on 40 mm x...
