Trench Field Stop IGBT
VCE = 650 V, IC = 40 A Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A4H, MGF65A4H, FGF65A4H
Data Sheet
Descri...
Description
VCE = 650 V, IC = 40 A Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A4H, MGF65A4H, FGF65A4H
Data Sheet
Description
Packages
The KGF65A4H, MGF65A4H, and FGF65A4H are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction. Thus, these Field Stop IGBTs can improve the efficiency of your circuit.
TO247-3L
(4)
TO3P-3L
(4)
Features
● Low Saturation Voltage ● High Speed Switching ● With Integrated Fast Recovery Diode ● RoHS Compliant
(1) (2) (3)
TO3PF-3L
(1) (2) (3)
● VCE ------------------------------------------------------ 650 V ● IC (TC = 100 °C) ----------------------------------------- 40 A ● Short Circuit Withstand Time ----------------------- 10 μs ● VCE(sat)-----------------------------------------------1.9 V typ. ● tf (TJ = 175 °C) ------------------------------------ 60 ns typ. ● VF----------------------------------------------------1.8 V typ.
Applications
● Welding Converters ● PFC Circuit
(1) (2) (3)
(1)
(2)(4)
(1) Gate (2) Collector (3) Emitter (4) Collector
(3)
Selection Guide
Part Number KGF65A4H MGF65A4H FGF65A4H
Not to scale
Package TO247-3L TO3P-3L TO3PF-3L
xGF65A4H-DSE Rev.1.6
SANKEN ELCTRIC CO., LTD.
1
Feb. 19, 2018
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
KGF65A4H, MGF65A4H, FGF65A4H
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C Parameter
Collector to Emitter Voltage Gate to Emitter Voltage
Symb...
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