MGF65A4H

VCE = 650 V, IC = 40 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A4H, MGF65A4H, FGF65A4H Data Sheet Description Packages The KGF65A4H, MGF65A4H, and FGF65A4H are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction. Thus, these Field Stop IGBTs can improve the efficiency of your circuit. TO247-3L (4) TO3P-3L (4) Features ● Low Saturation Voltage ● High Speed Switching ● With Integrated Fast Recovery Diode ● RoHS Compliant (1) (2) (3) TO3PF-3L (1) (2) (3) ● VCE ------------------------------------------------------ 650 V ● IC (TC = 100 °C) ----------------------------------------- 40 A ● Short Circuit Withstand Time ----------------------- 10 μs ● VCE(sat)-----------------------------------------------1.9 V typ. ● tf (TJ = 175 °C) ------------------------------------ 60 ns typ. ● VF----------------------------------------------------1.8 V typ. Applications ● Welding Converters ● PFC Circuit (1) (2) (3) (1) (2)(4) (1) Gate (2) Collector (3) Emitter (4) Collector (3) Selection Guide Part Number KGF65A4H MGF65A4H FGF65A4H Not to scale Package TO247-3L TO3P-3L TO3PF-3L xGF65A4H-DSE Rev.1.6 SANKEN ELCTRIC CO., LTD. 1 Feb. 19, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 KGF65A4H, MGF65A4H, FGF65A4H Absolute Maximum Ratings Unless otherwise specified, TA = 25 °C Parameter Collector to Emitter Voltage Gate to Emitter Voltage Symb...