CJP12N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220//72F Plastic-Encapsulate MOSFETS 72/72) CJP12N60,CJPF12N60 600V N-Channel Power MOSFET General Description This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withistand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. FEATURE z Low Crss z Fast switching z Improved dv/dt capability D ! " !" G! " " ! S Maximum ratings (Ta=25℃ unless otherwise noted) 1. GATE 2. DRAIN 3. SOURCE Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Single Pulsed Avalanche Energy (note1) Power Dissipation Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature Symbol VDS VGS ID EAS PD RθJA TJ TSTG Value 600 ±30 12 790 2 62.5 150 -55 ~+150 Unit V A mJ W ℃/W ℃ www.cj-elec.com A,Dec,2010 1 D,Oct,2014 ...