CJPF10N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF10N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX   1.0Ω@10V ID 10A GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. TO-220F   1. GATE 2. DRAIN 3. SOURCE 123 FEATURE z High Current Rating z Low Gate Charge z Lower RDS(on) z Low Reverse Transfer Capacitance z Fast Switching Capability z Tighter VSD Specifications z Avalanche Energy Specified MARKING EQUIVALENT CIRCUIT CJPFN6 XXX CJPF10N65= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Sour...