N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF04N60
V(BR)DSS
600V
600V N...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF04N60
V(BR)DSS
600V
600V N-Channel Power MOSFET
RDS(on)MAX
3Ω@10V
ID
4A
TO-220F
General Description This advanced high voltage MOSFET is designed to wighstand
high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
1. GATE 2. DRAIN 3. SOURCE
FEATURE z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJPF04N60
XXX
CJPF04N60= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code
123
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous D...
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