N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP12N65
V(BR)DSS
650V
N-Chan...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP12N65
V(BR)DSS
650V
N-Channel Power MOSFET
RDS(on)MAX
0.85Ω@10V
ID
12A
TO-220-3L
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
1. GATE 2. DRAIN 3. SOURCE
FEATURE z High Current Rating z Lower RDS(on) z Low Reverse Transfer Capacitance z Fast Switching Capability z Tighter VSD Specifications z Avalanche Energy Specified
MARKING
Equivalent Circuit
CJP12N65= Device code Solid dot = Green molding compound device, if none, the normal device
XXX= Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren...
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