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CJP05N60B

JCET
Part Number CJP05N60B
Manufacturer JCET
Description N-Channel MOSFET
Published Dec 26, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP05N60B V(BR)DSS 600V N-Cha...
Datasheet PDF File CJP05N60B PDF File

CJP05N60B
CJP05N60B

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP05N60B V(BR)DSS 600V N-Channel Power MOSFET RDS(on)MAX   2.
5Ω@10V ID 5A TO-220-3L   GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.
This new recovery time.
Desighed for high voltage, high speed switching high energy device also offers a drain-to-source diode fast applications such as power supplies, converters, power motor controls and bridge circuits.
1.
GATE 2.
DRAIN 3.
SOURCE 123 FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalan...


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