CJP04N60A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP04N60A V(BR)DSS 600V N-Channel Power MOSFET RDS(on)MAX   3Ω@10V ID 4A TO-220-3L   GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified 1. GATE 2. DRAIN 3. SOURCE 123 MARKING EQUIVALENT CIRCUIT CJP04N60A= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed...