Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate MOSFETS
CJD4435 P-Channel 30-V(D-S) MOSFET
V(BR)DSS
-30 9
RDS(on)MAX
24Pȍ#-9
35Pȍ#-9
ID
-9.1$
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch z Battery Switch
TO-251-3L
1. GATE 2. DRAIN 3. SOURCE
1 23
MARKING
EQUIVALENT CIRCUIT
CJD4435= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage
Symbol VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Power Dissipation Maximum Power Dissipation
(note 1, Ta=25℃) (note 2, Tc=25℃)
PD
Thermal Resistance from Junction to Ambient (t≤10S)
RθJA
Operating Junction Temperature
TJ
Storage Temperature
Tstg
.
Value -30 ±20 -9.1 1 15 125 150
-55 ~+150
www.cj-elec.com
1
Unit V A W
℃/W ℃
D,Apr,2016
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
T.