CJD4410

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD4410 N-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch z Battery Switch TO-251-3L 1. GATE 2. DRAIN 3. SOURCE Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS Continuous Drain Current ID Power Dissipation Maximum Power Dissipation (note 1, Ta=25℃) (note 2, Tc=25℃) PD Thermal Resistance from Junction to Ambient (t≤10S) RθJA Operating Junction Temperature TJ Storage Temperature Tstg . Value 30 ±20 7.5 1 15 125 150 -55 ~+150 Unit V A W ℃/W ℃ www.cj-elec.com 1 F,Oct,2015 Electrical characteristics ( Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance (note 3) VGS(...