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CJB08N65

JCET
Part Number CJB08N65
Manufacturer JCET
Description N-Channel MOSFET
Published Dec 26, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB08N65 V(BR)DSS 650V N-Chan...
Datasheet PDF File CJB08N65 PDF File

CJB08N65
CJB08N65

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB08N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX   1.
4Ω@10V ID 8A TO-2-L   GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode fast recovery time.
Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
FEATURE  High Current Rating  Lower RDS(on)  Lower Capacitance  Lower Total Gate Charge  Tighter VSD Specifications  Avalanche Energy Specified 1.
GATE 2.
DR...


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