CJA9452

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9452 V(BR)DSS 20 V N-Channel 20-V(D-S) MOSFET RDS(on)MAX   38mΩ@10V  50mΩ@4.5V 80mΩ@2.5V  ID 4A Description The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low on- resistance and cost-effectiveness. SOT-89-3L 1. GATE 2. DRAIN 3. SOURCE MARKING Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Continuous Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature Symbol VDS VGS ID PD RθJA Tj Tstg Value 20 ±12 4 0.5 250 150 -55 ~+150 Unit V A W ℃/W ℃ www.cj-elec.com D,Nov,2011 1 F,Apr,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Off characteristics Drain-source breakdown voltage Gate-body leakage Zero gate voltage dr...