CJA03N10-HF

MOSFET CJA03N10-HF N-Channel RoHS Device Halogen Free Features -Special process technology for high ESD capability. -High density cell design for extremely low RDS(ON). -Good stability and uniformity with high EAS. -Excellent package for good heat dissipation. 1 : Gate 2 : Drain 3 : Source SOT-89-3L 0.181(4.60) 0.173(4.40) 0.061(1.55) REF. 0.102(2.60) 0.091(2.30) 123 0.167(4.25) 0.155(3.94) Circuit Diagram D G S 0.020(0.52) 0.013(0.32) 0.060(1.50) TYP. 0.023(0.58) 0.016(0.40) 0.118(3.00) TYP. 0.063(1.60) 0.055(1.40) 0.047(1.20) 0.035(0.90) 0.017(0.44) 0.014(0.35) Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25°C unless otherwise noted) Parameter Symbol Drain-source voltage VDS Gate-source voltage VGS Continuous drain current ID Pulsed drain current (Note 1) IDM Power dissipation PD Thermal resistance from Junction to ambient (Note 2) RΘJA Junction temperature TJ Storage temperature TSTG Note: 1. Repetitive rating : Pulse width limi...