APTM100H45SCTG

APTM100H45SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies CR1A CR3A Features Q1 CR1B CR3B Q3 Power MOS 7® MOSFETs - Low RDSon G1 G3 - Low input and Miller capacitance S1 OUT1 OUT2 S3 - Low gate charge CR2A CR4A - Avalanche energy rated Q2 CR2B CR4B Q4 Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery G2 S2 G4 S4 - Temperature Independent switching behavior - Positive temperature coefficient on VF NTC1 0/VBUS NTC2 Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections G3 G4 OUT2 S3 S4 Internal thermistor for temperature monitoring High level of integration Benefits VB US 0/VBUS OUT1 Outstanding performance at high frequency operation Direct mounting to...