3DG140

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG140 NPN Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Symbols Unit Total Dissipation Max. Collector Current Junction Temperature Storage Temperature C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Collector- Emitter Saturation Voltage Drop Base- Emitter Saturation Voltage Drop C-E Leakage Current E-B Leakage Current DC Current Gain Ptot ICM Tjm Tstg V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICEO IEBO hFE mW mA °C °C V V V V V uA uA Transition frequency fT MHz Specifications 100 15 175 -55~+175 20 15 4 0.35 1.0 0.1 0...