3CG640

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG640, 3CG708 PNP Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. Make up push pull amplifying circuit with NPN. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Symbols Total Dissipation Max. Collector Current Ptot ICM Junction Temperature Tjm Storage Temperature Tstg C-E Breakdown Voltage E-B Breakdown Voltage V(BR)CEO V(BR)EBO Collector- Emitter Saturation VCE(sat) Voltage Drop C-E Leakage Current ICEO DC Current Gain hFE Transition frequency fT Unit mW mA °C °C V V V uA MHz Specifications (Ta = 25°C ) 3CG640 1000 (Ta=25°C) 1500 175 3CG708 800 (Ta=25°C) 600 175 -5...