3CG708
PNP Silicon High Frequency Middle Power Transistor
Features: 1. Using epitaxy planar technology structure. High w...
3CG708
PNP Silicon High Frequency Middle Power
Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit. Make up push pull amplifying circuit with
NPN. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Parameter name Symbols Unit
Total Dissipation
Ptot mW
Max. Collector Current ICM mA
Junction Temperature Tjm °C
Storage Temperature Tstg °C
C-E Breakdown Voltage V(BR)CEO V
E-B Breakdown Voltage V(BR)EBO V
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
C-E Leakage Current ICEO uA
DC Current Gain
hFE
Transition frequency
fT MHz
Specifications
800 600 175 -55~+175
60
8
0.7
1.0
25~~270
100
(Ta = 25°C )
Test Condition
Ta=25°C
IC=0.1mA IE=0.1mA IC=500mA, IB=50mA VCE=30V VCE=2V, IC=50mA VCE=10V, IC=50mA
f=30MHz
hFE Col...
