3DD3852 TRANSISTOR (NPN)
FEATURES z High Current Gain z Saturation Voltage Low z Power dissipation PCW : 2 W (Tamb=25 ℃...
3DD3852
TRANSISTOR (
NPN)
FEATURES z High Current Gain z Saturation Voltage Low z Power dissipation PCW : 2 W (Tamb=25 ℃)
25 W (Tcase=25℃)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC TJ Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Junction Temperature Storage Temperature
TO-220F
1. BASE 2. COLLECTOR 3. EMITTE
Value 80 60 6 3 150
-55-150
Units V V V A
℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency *Pulse test: tp≤300μS, δ≤0.02.
Symbol Test conditions
V(BR)CBO IC=1mA, IE=0
V(BR)CEO IC=10mA, IB=0
V(BR)EBO IE=100μA, IC=0
ICBO
VCB=80V, IE=0
IEBO
VEB=6V, IC=0
hFE * VCE=4V, IC=500mA
VCE(sat) * IC=3A, IB=300...
