Document
HRLF80N06K
Jan 2016
HRLF80N06K
60V N-Channel Trench MOSFET
FEATURES
BVDSS = 60 V ID = 70 A Unrivalled Gate Charge : 100 nC (Typ.) Lower RDS(ON) : 6.3 Pȍ (Typ.) @VGS=10V Lower RDS(ON) : 7.5 Pȍ (Typ.) @VGS=4.5V 100% Avalanche Tested
8DFN 5x6
1
Absolute Maximum Ratings TJ=25 unless otherwise specified
Symbol
Parameter
Value
VDSS VGS ID IDM EAS PD TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current Pulsed Drain Current
TC = 25 TC = 100
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation
TC= 25 TA = 25
Operating and Storage Temperature Range
60 ρ20 70 44 150 220 69 2.0 -55 to +150
Units V V A A A mJ W W
Thermal Resistance Characteristics
Symbol
Parameter
RșJC RșJA
Junction-to-Case Junction-to-Ambient (steady state)
Typ. ---
Max. 1.8 62
Units /W /W
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HRLF80N06K
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Param.