HRLF180N10K

HRLF180N10K Jan 2016 HRLF180N10K 100V N-Channel Trench MOSFET FEATURES ‰ BVDSS = 100 V ‰ ID = 40 A ‰ Unrivalled Gate Charge : 94 nC (Typ.) ‰ Lower RDS(ON) : 16 Pȍ (Typ.) @VGS=10V ‰ Lower RDS(ON) : 17 Pȍ (Typ.) @VGS=4.5V ‰ 100% Avalanche Tested 8DFN 5x6 1 Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TC= 25୅ TA = 25୅ Operating and Storage Temperature Range 100 ρ20 40 25 90 110 63 2.0 -55 to +150 Units V V A A A mJ W W ୅ Thermal Resistance Characteristics Symbol Parameter RșJC RșJA Junction-to-Case Junction-to-Ambient (steady state) Typ. --- Max. 2.0 62 Units ୅/W ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͣ͝ͻΒΟ͑ͣͧ͑͢͡ HRLF180N10K Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Par...