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HCS60R092E Dataheets PDF



Part Number HCS60R092E
Manufacturers SemiHow
Logo SemiHow
Description 600V N-Channel Super Junction MOSFET
Datasheet HCS60R092E DatasheetHCS60R092E Datasheet (PDF)

HCS60R092E Super Junction MOSFET July 2016 HCS60R092E 600V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 40 92 45 Unit V A Pȍ nC Application ‰ PC Power ‰ Server Power Supply ‰ Telecom ‰ Solar Inverter ‰ Super Charger for Automobiles Package & Internal Circuit TO-220F G D S Absolute Maximum Ratings TC.

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HCS60R092E Super Junction MOSFET July 2016 HCS60R092E 600V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 40 92 45 Unit V A Pȍ nC Application ‰ PC Power ‰ Server Power Supply ‰ Telecom ‰ Solar Inverter ‰ Super Charger for Automobiles Package & Internal Circuit TO-220F G D S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS dv/dt dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) MOSFET dv/dt ruggedness, VDS=0…480V Reverse diode dv/dt, VDS=0…480V, IDS”ID Power Dissipation Operating and Storage Temperature Range Maximum lead temperature for so.


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