HCD70R1K4P

HCD70R1K4P HCD70R1K4P 700V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 7.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.15 ȍ(Typ.) @VGS=10V ‰ 100% Avalanche Tested Mar 2016 BVDSS = 700 V RDS(on)Typ ȍ ID = 4.0 A D-PAK 2 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt 700 4.0 2.8 12.0 ρ30 130 2.0 0.2 50 PD TJ, TSTG TL Power Dissipation (TC = 25୅) Operat...