HCD70R350E

HCD70R350E Super Junction MOSFET Sep 2016 HCD70R350E 700V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested ‰ Higher dv/dt ruggedness Application ‰ Lighting ‰ Hard Switching PWM ‰ Server Power Supply ‰ Charger Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 12 0.35 16 Unit V A ȍ nC Package & Internal Circuit TO-252 D S G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS dv/dt dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) MOSFET dv/dt ruggedness, VDS=0…480V Reverse diode dv/dt, VDS=0…480V, IDS”ID Power Dissipation (TC = 25୅) Operating and Storage Temperature Range Maximum lead temperatu...