CJU60N08

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L(4R) Plastic-Encapsulate MOSFETS CJU60N08 V(BR)DSS N-Channel Power MOSFET RDS(on)MAX ID 80V 8.5mΩ@10V   60A   GENERAL DESCRIPTION The CJU60N08 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. TO-252-2L(4R) 1. GATE 2 2. DRAIN 1 3. SOURCE 3 FEATURE  VDS =80V,ID =60A  RDS(ON) < 8.5mΩ @ VGS=10V  Good stability and uniformity with high EAS  Excellent package for good heat dissipation  High density cell design for ultra low Rdson  Special process technology for high ESD capability  Fully characterized avalanche voltage and current MARKING APPLICATION  Power switching application  Hard switched and high frequency circuits  Uninterruptible power supply EQUIV ALENT CIRCUIT CJU60N08 XXX CJU60N08= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code Maxi...