Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4410 N-Channel Power MOSFET
V(BR)DSS
30V
RDS(on)MAX
13.5mΩ@10V 20mΩ@ 4.5 V
ID
7.5A
DESCRIPTION
The CJQ4410 uses advanced trench technology to provide excellent
RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate
resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion.
SOP8
APPLICATIONS
z Battery Switch
z Load Switch
MARKING
Front side
Q4410 = Device code Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none, the normal device YY=Date Code
Equivalent Circuit
D DDD 8 7 65
1 234 S S SG
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Ra.