Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ08N02K N-Channel Power MOSFET
DESCRIPTION
The device uses advanced trench technology to provide excellent RDS(ON),
SOP8
low gate charge and operation with gate voltages as low as 1.8V. This device is
suitable for use as a load switch or in PWM applications .It is ESD protested
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available High power and current handing capability Surface mount package ESD protested
APPLICATIONS
D DDD 8 7 65
1 234 S S SG
Uni-directional or Bi-directional load switch
Low voltage application, notebook computer power
management
MARKING
Other battery powered circuits where high-side switching
Q08N02K =Device code Solid dot=Pin1 indicator Solid dot = Green molding compound device,
if none, the normal device
YY=Date Code
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter Drain-S.