CJMN2012

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS CJMN2012 N-Channel MOSFET V(BR)DSS   20V   RDS(on)MAX   11mΩ@ 4.5V 13mΩ@ 2.5V 16 mΩ@1.8V 22mΩ@1.5V 41mΩ@1.2V ID   12A   DFNWB2×2-6L-J FEATURES  TrenchFET Power MOSFET  Small package DFNWB2×2-6L-J MARKING: APPLICATION  Load Switch for Portable Applications Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Para meter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current (note 1) IDM Collector Current-Pulse(Note3) RθJA Thermal Resistance from Junction to Ambient (note 2) Tj Junction Temperature Tstg Storage Temperature TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) Value 20 ±10 12 40 167 150 -55~+150 260 www.cj-elec.com 1 Unit V V A A ℃/W ℃ ℃ ℃ C,Aug,2015 026)(7(/(&75,&$/&+$5$&7(5,67,&6 Ta=25 Я unless otherwise specified Parameter Symbol Test Condition STAT...