CJM1206-G

MOSFET CJM1206-G (P-Channel ) RoHS Device Comchip SMD Diode Specialist V(BR)DSS -12V RDS(on)MAX 45mΩ @ -4.5V 60mΩ @ -2.5V 90mΩ @ -1.8V ID -6A Features - P-Channel -12V(D-S) power MOSFET - Advanced trench MOSFET process technology - Ultra low on-resistance with low gate charge DFNWB2*2-6L-J 0.082(2.076) 0.076(1.924) Mechanical data - Case: DFNEB2*2-6L-J, molded plastic. 0.082(2.076) 0.076(1.924) 0.002(0.05) 0.000(0.00) 0.026(0.65)TYP. Circuit diagram - 1. DRAIN - 2. DRAIN - 3. GATE D1 - 4. SOURCE - 5. DRAIN - 6. DRAIN D2 G3 6D 5 D 4S 0.035(0.90) 0.028(0.70) 0.008(0.20) REF. 0.008(0.20) MIN. 4 5 0.013(0.326) 0.007(0.174) 6 0.026(0.66) 0.018(0.46) 0.008(0.40) 0.016(0.20) S 3 D 21 0.041(1.05) 0.033(0.85) 0.039(1.00) 0.031(0.80) 0.014(0.35) 0.010(0.25) Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25 °C unless otherwise noted) Parameter Symbol Value Drain-source voltage VDS -12 Gate-source voltage VGS ±8 Drain current-continuous I...