CJM1216

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1216 P-Channel Power MOSFET V(BR)DSS -12 V RDS(on)MAX 21mΩ@-4.5V 27mΩ@-2.5V ID -16A DFNWB2×2-6L-J 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. . This device is suitable for use as a load switching application and a wide variety of other applications. FEATURES  Advanced trench MOSFET process technology  Ultra low on-resistance with low gate charge APPLICATIONS  PWM application  Load switch  Battery charge in cellular handset 0$5.,1* Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (note 1) Power Dissipation (note 2 , Ta=25℃) Maximum Power Dissipation (note 3 , Tc=25℃) Thermal Resistance from...