CJE3134K

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS CJE3134K N-Channel MOSFET V(BR)DSS 20V RDS(on)MAX 380 mΩ@4.5V 450 mΩ@2.5V 800 mΩ@1.8V  FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed MARKING ID 0.75A  SOT-523 1. GATE 2. SOURCE 3. DRAIN APPLICATION z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source voltage Typical Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed(note1) Power Dissipation (note 2) Thermal Resistance from Junction to Ambient Storage Temperature Junction Temperature Symbol VDSS VGS ID IDM PD RθJA Tj Tstg www.cj-elec.com 1 Value 20 ±12 0.75 3 150 833 150 -55 ~+150 Unit V A mW ℃/W ℃ A,Dec,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless othe...