DatasheetsPDF.com

IPB35N10S3L-26

Infineon
Part Number IPB35N10S3L-26
Manufacturer Infineon
Description MOSFET
Published Dec 20, 2016
Detailed Description OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C p...
Datasheet PDF File IPB35N10S3L-26 PDF File

IPB35N10S3L-26
IPB35N10S3L-26

Overview
OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPB35N10S3L-26 Product Summary VDS RDS(on),max ID 100 V 26.
3 mW 35 A PG-TO263-3-2 Type Package Marking IPB35N10S3L-26 PG-TO263-3-2 3N10L26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=17A Avalanche current, single pulse I AS - Gate source voltage2) V GS - Power dissipation ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)