BD828

DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BD826; BD828; BD830 PNP power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 23 Philips Semiconductors PNP power transistors Product specification BD826; BD828; BD830 FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS General purpose Driver stages in hi-fi amplifiers and television circuits. DESCRIPTION PNP power transistor in a TO-202; SOT128B plastic package. NPN complements: BD825 and BD829. PINNING PIN 1 2 3 handbook, halfpage DESCRIPTION emitter collector, connected to metal part of mounting surface base 2 3 1 12 3 MAM304 Fig.1 Simplified outline (TO-202; SOT128B) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VCBO collector-base voltage BD826 BD828 BD830 VCEO collector-emitter voltage BD826 BD828 BD830 ICM peak collector current Ptot total power dissipation hFE DC current gain fT transition frequency CON...