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CJD04N60B

Part Number	CJD04N60B
Manufacturer	JCET
Description	N-Channel MOSFET
Published	Dec 19, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60B V(BR)DSS 600V 600V N-...
Datasheet	CJD04N60B PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60B V(BR)DSS 600V 600V N-Channel Power MOSFET RDS(on)MAX 3.
0Ω@10V ID 4A TO-251S General Description This advanced high voltage MOSFET is designed to wighstand high 1.
GATE 2.
DRAIN energy in the avalanche mode and switch efficiently.
This new high energy 3.
SOURCE device also offers a drain-to-source diode wigh fast recovery time.
Desighed 1 23 for high voltage,high speed switching applications such as power supplies,converters,power motor controls and bridge circuits.
FEATURE z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specificati...

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