CJD02N60

CJD02N60 TO-251-3L Plastic-Encapsulate MOSFETS CJD02N60 N-Channel Power MOSFET General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. TO-251-3L 1. GATE 2. DRAIN 3. SOURCE FEATURE z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Characterized fo...