N-Channel MOSFET
-,$1*68&+$1*-,$1*(/(&7521,&67(&+12/2*<&2/7'
72/3ODVWLF(QFDSVXODWH026)(76
&-%1 1&KDQQHO3RZHU...
Description
-,$1*68&+$1*-,$1*(/(&7521,&67(&+12/2*<&2/7'
72/3ODVWLF(QFDSVXODWH026)(76
&-%1 1&KDQQHO3RZHU026)(7
V(BR)DSS
RDS(on)MAX
ID
9
Pȍ #9
$
'(6&5,37,21
The CJ%85N80 uses advanced trench technology and design to
provide excellent RDS(on) with low gate charge. Good stability and
uniformity with high EAS .This device is suitable for use in PWM,
load switching and general purpose applications.
TO-2-L
1. GATE 2. DRAIN 3. SOURCE
)($785( z Advanced trench process technology z Special designed for convertors and power controls z High density cell design for ultra low RDS(on) z Fully characterized avalanche voltage and current z Fast switching z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability
$33/,&$7,21 z Power switching application z Hard switched and high frequency circuits z Uninterruptible power supply
0$5.,1* ...
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