CJAC10H03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5×6-8L Plastic-Encapsulate MOSFETS CJAC10H03 V(BR)DSS 30 V N-Channel Power MOSFET RDS(on)MAX ID   2.5mΩ@10V  3.5mΩ@4.5V  100A PDFNWB5×6-8L DESCRIPTION The CJAC10H03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES  High density cell design for ultra low RDS(ON)  Fully characterized avalanche voltage and  Excellent package for good heat dissipation  Special process technology for high ESD current  Good stability and uniformity with high EAS APPLICATIONS capability  SMPS and general purpose applications  Hard switched and high frequency circuits  Power switching application  Uninterruptible power supply MARKING CJAC10H03 = Part No. Solid dot=Pin1 indicator XXX=Date Code EQUIVALENT CIRCUIT D DDD 8 7 65 1 234 S S SG MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter ...