CJ2301S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301S P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX -20 V   112mΩ@-4.5V  142mΩ@-2.5V   ID -2.3A SOT-23 1. GATE 2. SOURCE 3. DRAIN FEATURE TrenchFET Power MOSFET APPLICATION z Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t ≤5s) Junction Temperature Storage Temperature VDS VGS ID IDM IS PD RθJA TJ Tstg Value -20 ±8 -2.3 -10 -0.72 0.35 357 150 -55 ~+150 Unit V A W ℃/W ℃ www.cj-elec.com 1 D,Apr,2015 A,Mar,2011 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Static Drain-source breakdown voltage Gate-source threshold voltage Gate-...