CJ1012

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS CJ1012 N-Channel Power MOSFET V(BR)DSS 20 V RDS(on)MAX  700mΩ@4.5V  850mΩ@2.5V   ID 500mA General Description This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). SOT-523 1. GATE 2. SOURCE 3. DRAIN 1 3 2 FEATURE  High-Side Switching  Low On-Resistance  Low Threshold  Fast Switching Speed  ESD protected MARKING APPLICATIONS  Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories  Battery Operated Systems  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers Equivalent Circuit C= Device Code Solid dot = Green molding compound device,if none, the normal device. Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source voltage Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed(note1) Power Dissipation (note 2 , Ta=25℃) Maximum Power Dissipation ...