2SK3019

SMD Type N-Channel MOSFET 2SK3019 ■ Features ● Low on-resistance. ● Fast switching speed. ● Low voltage drive (2.5V) makes this device ideal for portable equipment. ● Easily designed drive circuits. ● Easy to parallel. Gate Drain Gate Protection Diode Source MOSFET 1 Gate 2 Source 3 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Continuous Drain Current Pulsed *1 IDP Power Dissipation *2 PD Junction Temperature Storage Temperature Range TJ Tstg *1 Pw≤10μs, Duty cycle≤1% *2 With each pin mounted on the recommended lands. ■ Electrical Characteristics Ta = 25℃ Rating 30 ±20 ±100 ±400 150 150 -55 to 150 Unit V mA mW ℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer admittance Input Capacitance Output Capacitance Reverse Tr...