N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2SK1658 N-channel MOSFET
V(BR)...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2SK1658 N-channel MOSFET
V(BR)DSS
30 V
RDS(on)MAX
10Ω@4V
15Ω@2.5V
ID
100mA
SOT-323
1. GATE 2. SOURCE 3. DRAIN
FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for
Portable equipment z Easily designed drive circuits z Easy to parallel
MARKING
APPLICATION z Interfacing , Switching
Equivalent Circuit
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol VDS VGS ID
Parameter
Drain-Source voltage
Gate-Source Voltage Continuous Drain Current
PD Power Dissipation TJ Junction Temperature
Tstg Storage Temperature RθJA Thermal Resistance from Junction to Ambient
Value 30 ±7 0.1 0.2 150 -55-150 625
Unit V V A W
℃ ℃ ℃ /W
www.cj-elec.com
1
B,Apr,2015
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate ...
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