2N7002W

2N7002W — N-Channel Enhancement Mode Field Effect Transistor October 2007 2N7002W N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant D G SOT - 323 Marking : 2N S Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value VDSS VDGR VGSS Drain-Source Voltage Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage Continuous Pulsed 60 60 ±20 ±40 ID Drain Current Continuous Continuous @ 100°C Pulsed 115 73 800 TJ , TSTG Junction and Storage Temperature Range -55 to +150 * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Units V V V mA °C Thermal Characteristics Symbol Parameter PD Total Device Dissipation Derating above TA = 25°C RθJA Thermal Resistance, Junction to Am...